Under the agreement, the two companies will work together to advance joint development plans for GaN’s power technology and jointly promote the bright future of the technology in consumer electronics, data centers, automotive, industrial power systems and other fields in the coming years.
At the same time, Innoscience, an 8-inch high-performance, low-cost GaN-on-Si manufacturing company, can use ST’s front-end manufacturing capacity outside China to produce its GaN wafers, and ST can also use Innoscience’s front-end manufacturing capacity in China to produce its own GaN wafers.
ST said that the two parties share the goal of expanding their respective GaN product portfolios and market supply capabilities based on this flexible supply chain layout, and improving the resilience of the supply chain to meet various customer needs in a wider range of application scenarios.
Marco Cassis, President of STMicroelectronics’ Analog, Power & Discrete, MEMS & Sensors Group (APMS), commented that ST and Innoscience are both IDMs and that this collaboration will maximize the benefits of this IDM model and create value for customers around the world. On the one hand, ST will accelerate the deployment of GaN power technology and further improve its existing silicon (Si) and silicon carbide (SiC) product portfolios. On the other hand, ST will also better serve global customers through a flexible manufacturing model.
In addition, Dr. Weiwei Luo, Chairman and Founder of Innoscience, also pointed out that the strategic cooperation with ST will further expand and accelerate the popularization of GaN technology, and the two teams will work together to develop the next generation of GaN technology.
At present, GaN power devices have been rapidly popularized in the fields of consumer electronics, data centers, industrial power supplies and photovoltaic inverters, and are actively used in the design of next-generation electric vehicle powertrains due to their significant lightweight advantages.
ST began to increase its efforts to deploy gallium nitride
In the past year, ST has made frequent moves in the field of gallium nitride, demonstrating its great importance and active investment in this emerging technology.
In December 2024, ST announced a strategic investment in Innoscience in 2024, focusing on GaN technology research and development, rather than pure financial investment, marking ST’s further in-depth layout in the GaN market. Innoscience’s total revenue in 2024 will reach 828.5 million yuan, a year-on-year increase of 39.8%, of which the revenue of GaN discrete devices and integrated circuits will be 360.8 million yuan (87.8% year-on-year).
In January 2025, ST released the MasterGaN-L series (including MasterGaN1L, MasterGaN4L, etc.), which is an optimized and upgraded version of its GaN power device product line, mainly for high-frequency applications and energy efficiency improvement needs. The new models cover a power range from 200W to 5.5kW and are suitable for different topologies. The series further strengthens ST’s competitiveness in the GaN power device segment through high-frequency optimization and system-level integration.
On April 1, 2025, ST and Innoscience signed a joint development agreement for GaN power technology. Under the agreement, the two companies will work together to advance joint development plans for GaN power technology and jointly promote the widespread application of the technology in consumer electronics, data centers, automotive, and industrial power systems in the coming years.
These move-ins demonstrate that ST is accelerating the deployment of GaN technology in a number of ways, complementing its existing silicon and silicon carbide portfolio to meet a wide range of customer needs across a wider range of applications. At the same time, ST is also maintaining its competitiveness in the global semiconductor market by better serving global customers through flexible manufacturing models and improving supply chain resilience.
