Recently, Neumonda, a German semiconductor company, announced that it has reached a strategic cooperation with Ferroelectric Memory Company (FMC) to establish a new non-volatile memory chip (FeRAM) production line in Dresden, Germany.
At the heart of the collaboration is the DRAM technology developed by FMC. According to media reports, the technology breaks through the storage limitations of traditional FeRAM, and replaces the traditional lead zirconate titanate PZT material by using hafnium oxide (HfO2) compatible with the process below 10nm as the ferroelectric layer, and the storage capacity is increased from 4-8MB of traditional FeRAM to Gb-GB level, while maintaining the characteristics of no data loss when power is off.
Under the agreement, FMC will create non-volatile DRAM memory for AI, medical, industrial, automotive, and consumer applications, while Neumonda, which holds multiple DRAM memory design and test patents, will provide memory consulting services for FMC, as well as Rhinoe, Octopus, and Raptor test platforms for its non-volatile DRAM products.
It is reported that this is the first attempt in Europe to restart the local production of memory after the bankruptcy and closure of Infineon and Qimonda’s German DRAM factories in 2009.
